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14 May 2004 157-nm resist assessment by a full-field scanner
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Abstract
Fluorinated polymers are key materials for single-layer resists used in 157-nm lithography. We have evaluated the potential of fluorinated polymer-based resists from the viewpoint of critical dimension (CD) control, using a 0.90 numerical aperture (NA) 157-nm micro-stepper with an alternating phase shift mask (alt-PSM). A resolution limit of 55-nm line-and-space patterns was obtained and the bake temperature dependence of the CD was found to be less than 2 nm/°C. We further evaluated these resists using a 0.80-NA FPA-5800FS1 157-nm scanner for full-field imaging with an alt-PSM. With these resists, 60-nm line-and-space patterns were resolved, and a depth of focus (DOF) of more than 400 nm for 100- and 80-nm line-and-space patterns was confirmed. The CD variation across the wafer for a 100-nm 1:1 dense line pattern was 3.3 nm (3σ). Although there is still a need to improve line edge roughness and dry etching resistance, in terms of CD control the fluorinated polymer-based resists have demonstrated sufficient potential for mass-production of 65-nm-node semiconductor devices and beyond.
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Akihiko Otoguro, Shigeo Irie, Toshiyuki Ishimaru, Toshifumi Suganaga, Toshiro Itani, and Kiyoshi Fujii "157-nm resist assessment by a full-field scanner", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535092
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