Translator Disclaimer
14 May 2004 157-nm single-layer resist based on novel monocyclic fluorinated polymer
Author Affiliations +
Abstract
Fluorinated polymers are key materials for single-layer resists used in 157-nm lithography. We have been studying fluorinated polymers to determine their potential for use as the base resin and have developed a new monocyclic fluorinated polymer that has high transmittance (an absorption coefficient of 0.1 μm-1) at a 157-nm exposure wavelength and high dry-etching resistance (a dry-etching rate of 1.86 times that of a KrF resist) under hard mask dry-etching conditions. Moreover, it has a high dissolution rate in standard aqueous tetramethylammoniumhydroxide developer (a dissolution rate of more than 600 nm/s). Using this polymer with adamanthylmethoxymethyl as a protecting group, we were able to resolve a 60-nm line-and-space pattern using a 0.90 numerical aperture 157-nm laser micro-stepper along with a resolution-enhancement alternating phase-shift mask technique. This polymer has enabled both high dry-etching resistance (a dry-etching rate equal to 1.43 times that of a KrF resist) and good imaging performance.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Akihiko Otoguro, Shigeo Irie, Toshiro Itani, Kiyoshi Fujii, Yoko Takebe, Yasuhide Kawaguchi, and Osamu Yokokoji "157-nm single-layer resist based on novel monocyclic fluorinated polymer", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535013
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Fluoropolymer resists for 157-nm lithography
Proceedings of SPIE (July 23 2002)
Development of new resist materials for 193 nm dry and...
Proceedings of SPIE (March 28 2006)
Resist materials for 157-nm lithography
Proceedings of SPIE (August 23 2001)
Transparent resins for 157-nm lithography
Proceedings of SPIE (August 23 2001)

Back to Top