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14 May 2004 A new monocyclic fluropolymer structure for 157-nm photoresists
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We earlier developed a series of fluoropolymers (FPRs) for use as first-generation 157-nm photoresist polymers. These FPRs have a partially fluorinated monocyclic structure and provide excellent transparency. However, their etching resistance is low (half that of conventional KrF resists) and an insufficient dissolution rate in tetramethylammonium hydroxide (TMAH) solution. To improve the characteristics of these polymers, while retaining high transparency, we had to redesign the main chain fluoropolymer structure. In this paper, we describe a new monocyclic fluoropolymer structure for a second-generation 157-nm photoresist polymer. This structure also has a fluorine atom in the polymer main chain, as well as a fluoro-containing acidic alcohol group. We synthesized two types of fluoropolymers, ASF-1 and ASF-2. We found that ASF-1 had transparency of 0.18 μm-1, better than that of the FPRs, and the etching resistance was improved. Unfortunately, the dissolution rate was poor. On the other hand, ASF-2 showed even better transparency of 0.1 μm-1, improved etching resistance, and a dissolution rate of more than 600 nm/s, which is sufficient for use as a resist. The introduction of a protecting group (e.g., the methoxymethyl or adamantylmethoxymethyl group) to the hydroxyl group of ASF-2 can be done after the polymerization reaction. Using partially protected ASF-2 with an appropriate protecting group, we were able to fabricate a sub-60-nm line-and-space pattern.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoko Takebe, Masataka Eda, Shinji Okada, Osamu Yokokoji, Shigeo Irie, Akihiko Otoguro, Kiyoshi Fujii, and Toshiro Itani "A new monocyclic fluropolymer structure for 157-nm photoresists", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004);

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