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14 May 2004 Characterization of TFE/norbornene-based fluoropolymer resist for 157-nm lithography
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Fluoropolymers are key materials in the single-layer resists used in 157-nm lithography. We have been studying fluoropolymers to determine their potential use as base resins. These polymers are main-chain fluorinated polymers synthesized by co-polymerizing tetrafluoroethylene (TFE) and functional norbornene. We developed a new polymer that is highly transparent and has high dry-etching resistance by attaching a PG-F protecting group, which has high dry-etching resistance, to a TFE/norbornene-based fluorinated polymer. The dry-etching rate for the 15 % blocked polymer was 1.50 times that of a KrF resist and its absorption coefficient at a 157-nm-exposure wavelength was 1.06 /μm. We introduced various photoacid generators (PAGs) to the polymer, and compared lithographic performance. As a result, we found polymer with a triphenylsulfonium-salts-based PAG had a good pattern profile, and polymer with a high-acidity PAG resolved a fine pattern. In particular, polymer with a triphenylsulfonium perfluorooctane sulfonate PAG was able to resolve a 60-nm line and space pattern. We then added various quenchers to the polymer and the PAG, and compared pattern profiles. We found that the use of a high-basicity quencher improved the resolution of the resist and line edge roughness. Consequently, that the polymer with the triphenylsulfonium perfluorooctane sulfonate PAG and tributylamine quencher could resolve a 55-nm line and space pattern. These results provided guidelines for choosing the PAG and quencher for this polymer.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takuya Hagiwara, Takamitsu Furukawa, Toshiro Itani, Kiyoshi Fujii, Takuji Ishikawa, Meiten Koh, Tetsuhiro Kodani, Tsukasa Moriya, Tsuneo Yamashita, Takayuki Araki, Minoru Toriumi, and Hirokazu Aoyama "Characterization of TFE/norbornene-based fluoropolymer resist for 157-nm lithography", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004);


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