14 May 2004 Design and development of high-etch-rate organic bottom antireflective coating for sub-100-nm node and beyond
Author Affiliations +
Abstract
As the semiconductor industry sails into the 100nm node and beyond, enabled by the integration of ArF lithography, new Bottom Antireflective Coatings (B.A.R.C.s) are required to address challenges associated with this new technology. Of these challenges, higher etch rates and better compatibility with the over coated resist are of central importance. New polymer platforms and additives in B.A.R.C. formulations will be required to overcome these challenges. The intent of this publication is to introduce our newly developed B.A.R.C.s designed to addresses the challenges of ArF lithography. All are currently available for integration into mass production of sub 100nm integrated circuit devices.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hengpeng Wu, Hengpeng Wu, Zhong Xiang, Zhong Xiang, Aritaka Hishida, Aritaka Hishida, David Abdallah, David Abdallah, Jianhui Shan, Jianhui Shan, Eleazar Gonzalez, Eleazar Gonzalez, Shuji S. Ding, Shuji S. Ding, Mark Neisser, Mark Neisser, } "Design and development of high-etch-rate organic bottom antireflective coating for sub-100-nm node and beyond", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.537883; https://doi.org/10.1117/12.537883
PROCEEDINGS
6 PAGES


SHARE
Back to Top