14 May 2004 Developer-soluble gap fill materials for patterning metal trenches in via-first dual-damascene process
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Abstract
This paper discusses a novel approach of using a developer-soluble gap fill material, wherein the gap fill material is coated in a layer thick enough to planarize all the topography and is then recessed using a standard 0.26N TMAH developer. The material recess process takes place in the same coater track where it is coated and therefore simplifies the process and increases wafer throughput. Performance and properties of two types of developer-soluble gap fill materials (EXP03049 and NCA2528) based on two different polymer platforms will be discussed in detail.
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Mandar Bhave, Kevin Edwards, Carlton A. Washburn, Satoshi Takei, Yasushi Sakaida, Yasuyuki Nakajima, "Developer-soluble gap fill materials for patterning metal trenches in via-first dual-damascene process", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534338; https://doi.org/10.1117/12.534338
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