Electron-beam assisted resist sidewall angle control and its applications

Jei-Wei Chang; Chao-Peng Chen

doi:10.1117/12.530381

14 May 2004 Electron-beam-assisted resist sidewall angle control and its applications

Jei-Wei Chang, Chao-Peng Chen

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.530381
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Conventional lift-off process uses dual-layer resists for transferring image into the substrate (top layer) and releasing the deposit (bottom layer). However, as the critical dimension of top layer approaches sub-100 nm, the undercut of bottom layer for subsequent lift-off process becomes very difficult to control. An alternative approach is to use single-layer resist to do lift-off. Such a process requires resist patterns with a negative-slope sidewall angle, which is not easily achieved by the optical lithographic tools. In this communication, we presented a lift-off method using a tilted electron beam and further development to produce sub-100 nm features with a negative-slope sidewall angle. This process was demonstrated in a negative-tone chemically amplified resist (NEB22A2) by using an exposure electron-beam system (Hitachi-900D). The computations, based on Monte Carlo simulations, were found to be in good agreement with the experimental results. Two extensive applications for recording heads were also presented.

Citation Download Citation

Jei-Wei Chang and Chao-Peng Chen "Electron-beam-assisted resist sidewall angle control and its applications", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.530381

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