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14 May 2004 Fluoropolymers for 157-nm single-layer resists developed using a new etching rate estimation model (KI-Model)
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Abstract
For 157-nm single-layer resists, dry etching resistance is an important issue because of the difficulty of striking a balance between 157-nm transparency and an acceptable level of dry etching resistance. To achieve an acceptable trade-off, the fluorine atom can be introduced into the resist polymer structure to obtain higher transparency, despite the fluorine atom’s high reactivity in the plasma etching process. We recently proposed a model for estimating dry-etching-resistance (the KI-model) and have shown that it can be effectively applied to the design of new fluoropolymer structures. Through simulation based on the KI-model, we were able to develop a new fluoropolymer with good dry etching resistance and high transparency. We found that a new protective group, 2-cyclohexylcyclohexanoxymethyl (CCOM), improved the characteristics of our novel fluoropolymer, compared with use of a MOM group, when used in the base resin of the resist. In this paper, we report on the usefulness of the KI-model for developing new fluorinated protective groups and new base polymers. Moreover, we have developed a new base fluoropolymer which has higher transparency and a similar degree of dry etching resistance as a monocyclic fluoropolymer with a CCOM protective group.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasuhide Kawaguchi, Takashi Sasaki, Jun Irisawa, Osamu Yokokoji, Shigeo Irie, Akihiko Otoguro, Toshiro Itani, and Kiyoshi Fujii "Fluoropolymers for 157-nm single-layer resists developed using a new etching rate estimation model (KI-Model)", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.533907
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