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14 May 2004 Fluoropolymers for 157-nm single-layer resists developed using a new etching rate estimation model (KI-Model)
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For 157-nm single-layer resists, dry etching resistance is an important issue because of the difficulty of striking a balance between 157-nm transparency and an acceptable level of dry etching resistance. To achieve an acceptable trade-off, the fluorine atom can be introduced into the resist polymer structure to obtain higher transparency, despite the fluorine atom’s high reactivity in the plasma etching process. We recently proposed a model for estimating dry-etching-resistance (the KI-model) and have shown that it can be effectively applied to the design of new fluoropolymer structures. Through simulation based on the KI-model, we were able to develop a new fluoropolymer with good dry etching resistance and high transparency. We found that a new protective group, 2-cyclohexylcyclohexanoxymethyl (CCOM), improved the characteristics of our novel fluoropolymer, compared with use of a MOM group, when used in the base resin of the resist. In this paper, we report on the usefulness of the KI-model for developing new fluorinated protective groups and new base polymers. Moreover, we have developed a new base fluoropolymer which has higher transparency and a similar degree of dry etching resistance as a monocyclic fluoropolymer with a CCOM protective group.
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Yasuhide Kawaguchi, Takashi Sasaki, Jun Irisawa, Osamu Yokokoji, Shigeo Irie, Akihiko Otoguro, Toshiro Itani, and Kiyoshi Fujii "Fluoropolymers for 157-nm single-layer resists developed using a new etching rate estimation model (KI-Model)", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004);

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