Influence of activation energy on LER in chemically amplified KrF photoresists

Jae Hyun Kim; Chang Ho Lee; Seok Bong Park; Won Mi Kim; Sang Sik Moon; Kyung-Mee Kim; Shi Yong Lee; Sangwoong Yoon; Young Ho Kim; Sang-Mun Chon

doi:10.1117/12.533880

14 May 2004 Influence of activation energy on LER in chemically amplified KrF photoresists

Jae Hyun Kim, Chang Ho Lee, Seok Bong Park, Won Mi Kim, Sang Sik Moon, Kyung-Mee Kim, Shi Yong Lee, Sangwoong Yoon, Young Ho Kim, Sang-Mun Chon

Author Affiliations +

Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.533880
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

LER of an acetal-type photoresist (PR) and an annealing-type PR was measured by Atomic Force Microscopy, with which LER is more quantitatively measurable than using SEM. The annealing-type PR showed smaller LER than acetal-type did. Acid diffusion length measurement of these two types of KrF photoresists with a practical method that is a measurement of the thickness loss in a resist film after development which follows placement of exposed resist powder on the surface and applying PEB was also executed. The annealing-type PR has been found to show longer acid diffusion length than that of acetal-type PR. Considering deblocking temperature, acetal group is cleaved right upon exposure before PEB due to its relatively low activation energy. This means that there would be more hydroxystyrene units in acetal-type PR at the beginning of PEB than in annealing-type one. T_g of photoresist samples before and after deblocking reaction was also measured by DSC. After deblocking reaction, it was found that T_g of acetal-type PR is much higher than that of annealing-type PR. This relatively high T_g will make acetal-type PR to have shorter acid diffusion length in conjunction with relatively low PEB temperature comparing with annealing-type in general. The absolute T_g value and T_g change with deblocking reaction depending on types of PRs were correlated to explain the inherent difference in LER performance in different types of PRs.

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Jae Hyun Kim, Chang Ho Lee, Seok Bong Park, Won Mi Kim, Sang Sik Moon, Kyung-Mee Kim, Shi Yong Lee, Sangwoong Yoon, Young Ho Kim, and Sang-Mun Chon "Influence of activation energy on LER in chemically amplified KrF photoresists", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.533880

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