14 May 2004 Investigation of the effect of resist components and process condition on photochemical efficiency of ArF photoresist
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Abstract
Sensitivity and resolution capability of photoresist depend on various parameters, such as efficiency of photoacid generation, base strength, types and concentration of protection groups on a polymer, as well as lithographic process condition. We have prepared polymers containing different protecting groups and investigated their effects on the sensitivity, and eventually, on ArF resist photolithographic behavior. Also, several different photoacid generators (PAGs) and bases were employed to study the influence of them on the resist sensitivity. We have changed process condition, especially, bake condition to discuss the role of bake temperature on the photochemical efficiency of the resist. It was found that the diffusion of the photogenerated acid and bases is the most significant factor to determine resist sensitivity than others. The detailed results will be discussed in this paper.
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Jung-Woo Kim, Jung-Woo Kim, Eun-Kyung Son, Eun-Kyung Son, Sang-Hyang Lee, Sang-Hyang Lee, Deogbae Kim, Deogbae Kim, Jaehyun Kim, Jaehyun Kim, Geunsu Lee, Geunsu Lee, Jae Chang Jung, Jae Chang Jung, Cheol Kyu Bok, Cheol Kyu Bok, Seung Chan Moon, Seung Chan Moon, Ki Soo Shin, Ki Soo Shin, } "Investigation of the effect of resist components and process condition on photochemical efficiency of ArF photoresist", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.534675; https://doi.org/10.1117/12.534675
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