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14 May 2004 Liquid immersion lithography: evaluation of resist issues
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We address in this report a set of key questions tied to the implementation of liquid immersion lithography, from the perspective of the resist materials. We discuss the broad question of whether chemically amplified resists are capable of achieving the spatial resolution that ultimately will be required for the most advanced immersion scenario. Initial studies undertaken using model 193 nm resist materials provide some insight into how an aqueous liquid immersion process can affect the resist material.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
William Hinsberg, Gregory M. Wallraff, Carl E. Larson, Blake W. Davis, Vaughn Deline, Simone Raoux, Dolores Miller, Frances A. Houle, John Hoffnagle, Martha I. Sanchez, Charles Rettner, Linda K. Sundberg, David R. Medeiros, Ralph R. Dammel, and Willard E. Conley "Liquid immersion lithography: evaluation of resist issues", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004);

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