14 May 2004 New BARC materials for the 65-nm node in 193-nm lithography
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New fast-etching bottom anti-reflective coatings have been prepared at Brewer Science, Inc., for 193-nm lithography. These materials, EXP03087B and EXP03066, were targeted for first and second reflectivity minima thickness, respectively. The optical constants (n and k) of these materials were 1.70 and 0.50, respectively, for EXP03087B and 1.71 and 0.31, respectively, for EXP03066. After thermosetting, these materials were immiscible with photoresists and were not affected by base developer. Profiles utilizing these BARCs with JSR's AR1221J photoresist have shown 90-nm (l:l line space) dense lines and 100-nm lines with FFA’s GAR8105G1 resist.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles J. Neef, Charles J. Neef, Vandana Krishnamurthy, Vandana Krishnamurthy, Mariya I. Nagatkina, Mariya I. Nagatkina, Evan Bryant, Evan Bryant, Michelle Windsor, Michelle Windsor, Cheryl Nesbit, Cheryl Nesbit, } "New BARC materials for the 65-nm node in 193-nm lithography", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.535423; https://doi.org/10.1117/12.535423


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