14 May 2004 PEB sensitivity studies of ArF resists: II. Polymer and solvent effects
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Abstract
Keeping post exposure bake (PEB) sensitivity low has become one of the most crucial factors for implementing the 193nm resist process into mass production. In a previous report, we have demonstrated that the nature of the photo acid generator (PAG) has a strong effect on the PEB sensitivity of 193 resists. Based on our findings, we decided to extend our studies to the other important resist components, such as polymers prepared with various monomer compositions, and casting solvents. Also, in an effort to investigate whether PEB sensitivity can be reduced by process optimization, the influence of soft bake and post exposure bake conditions was studied. This paper describes our new findings on some of the important factors that affect the PEB sensitivity of 193 resists.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chi-Sun Hong, Sang-Ho Lee, Woo-Kyu Kim, Takanori Kudo, Allen Timko, Douglas Mckenzie, Clement Anyadiegwu, Dalil M. Rahman, Guanyang Lin, Ralph R. Dammel, and Munirathna Padmanaban "PEB sensitivity studies of ArF resists: II. Polymer and solvent effects", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.537931; https://doi.org/10.1117/12.537931
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