Surface conditioning solutions to reduce resist line roughness

Peng Zhang; Manuel Jaramillo Jr.; Madhukar B. Rao; Colin Yates; Danielle M. King; Brenda F. Ross; Bridget L. O'Brien

doi:10.1117/12.535819

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14 May 2004 Surface conditioning solutions to reduce resist line roughness

Peng Zhang, Manuel Jaramillo Jr., Madhukar B. Rao, Colin Yates, Danielle M. King, Brenda F. Ross, Bridget L. O'Brien

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Proceedings Volume 5376, Advances in Resist Technology and Processing XXI; (2004) https://doi.org/10.1117/12.535819
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

In this study, surface conditioning solutions were used during post-develop process to enhance the 193 nm lithography performance. These solutions were applied to the wafer surface in a surface treatment step between the DI water rinse and drying steps. Compared to the standard develop process, the formulated surface conditioning solution enabled a 24% reduction in line width roughness, particularly in the high frequency roughness components. The solution also improved the pattern collapse performance by enlarging the non-collapse window and extending the minimum CD feature size by 10 nm. Additional benefits provided by the formulated surface conditioner solution were minimal changes to CD and resist profile.

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Peng Zhang, Manuel Jaramillo Jr., Madhukar B. Rao, Colin Yates, Danielle M. King, Brenda F. Ross, and Bridget L. O'Brien "Surface conditioning solutions to reduce resist line roughness", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); https://doi.org/10.1117/12.535819

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