14 May 2004 Understanding the role of base quenchers in photoresists
Author Affiliations +
As critical dimensions in microlithography become ever smaller and the importance of line edge roughness becomes more pronounced, it is becoming increasingly important to gain a fundamental understanding of how the chemical composition of modern photoresists influences resist performance. Modern resists contain four basic components: polymer, photoacid generator, dissolution inhibitor, and base quencher. Of these four components, the one that is least understood is the base quencher. This paper examines the influence of base additives on line edge roughness, contrast, photospeed, and isofocal critical dimension (CD). A mathematical model describing the tradeoff between contrast and photospeed is developed, line edge roughness values for different base types and loadings are reported, and isofocal CD is shown for various photoacid types as well as for different base types and loadings.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Timothy B. Michaelson, Timothy B. Michaelson, Andrew T. Jamieson, Andrew T. Jamieson, Adam R. Pawloski, Adam R. Pawloski, Jeffrey Byers, Jeffrey Byers, Alden Acheta, Alden Acheta, C. Grant Willson, C. Grant Willson, } "Understanding the role of base quenchers in photoresists", Proc. SPIE 5376, Advances in Resist Technology and Processing XXI, (14 May 2004); doi: 10.1117/12.537658; https://doi.org/10.1117/12.537658


Intel's EUV resist development
Proceedings of SPIE (June 11 2003)
Enhanced lumped parameter model for photolithography
Proceedings of SPIE (May 16 1994)
Negative tone 193-nm photoresists
Proceedings of SPIE (June 11 2003)
Mechanistic simulation of line-edge roughness
Proceedings of SPIE (March 22 2007)

Back to Top