Paper
28 May 2004 0.85-NA ArF scanner: advancing features and performances
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Abstract
In response to the age of full-scale ArF implementation in commercial production lines, we developed an 80 nm generation exposure tool, the FPA-6000AS4. This system is equipped with a 0.85 NA projection optics and an illuminator which provides a wide variety of illumination modes required in actual processes, such as variable annular and optional quadrupole and dipole. To meet the increasingly severe CD requirements, the projection optics is designed to have extremely low aberration with schemes to prevent flares. For enhanced focus accuracy, increased number of focus sensor channels and higher optics magnification are provided, coupled with Z-axis interferometer which directly measures the height of the stage. A new focus correction capability is incorporated based on direct measurement of reticle surface shape. The 6000 platform features the reaction-less stage system which significantly improves MA and MSD, the important indices of the stage performance. The platform also achieves throughput 1.4 times as high as the previous systems. This paper discusses the FPA-6000AS4’s imaging performance, reaction-less stage capability, reticle focusing, overlay, and throughput, showing some data.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Atsushi Namba, Shigeyuki Uzawa, and Kenichi Kotoku "0.85-NA ArF scanner: advancing features and performances", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.544239
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Reticles

Semiconducting wafers

Sensors

Scanners

Cadmium

Projection systems

Interferometers

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