28 May 2004 157-nm chromeless phase lithography with extremely high numerical aperture
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Abstract
Chromeless Phase Lithography is known as an effective resolution enhancement technique for isolated line patterns. We fabricated a chromeless phase lithography mask for 157-nm lithography, and evaluated the lithographic performance using a 0.90 numerical aperture 157-nm microstepper. To obtain the best resolution, illumination condition was optimized to conventional illumination with 0.7 partial coherence (σ) using lithography simulation. In the exposure experiment, 30-nm-wide isolated line, 30-nm-wide 140-nm-pitch line-and-space, and 30-nm-wide static random access memory (SRAM) gate patterns were resolved. Further lithography simulation results indicated that the resolution limit of 24-nm would be obtained by eliminating the image degradation factors such as the aberration, flare, and central obscuration.
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Kunio Watanabe, Kunio Watanabe, Takuya Hagiwara, Takuya Hagiwara, Seiji Matsuura, Seiji Matsuura, Toshifumi Suganaga , Toshifumi Suganaga , Toshiro Itani , Toshiro Itani , Kiyoshi Fujii, Kiyoshi Fujii, } "157-nm chromeless phase lithography with extremely high numerical aperture", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.535150; https://doi.org/10.1117/12.535150
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