28 May 2004 A 90-nm design-rule patterning application using alt-PSM with KrF lithography for volume manufacturing at k1=0.27
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Abstract
We selected alternating phase shift technology to image 90nm dense lines with a pitch of 200nm for volume production purposes. We simulated which settings of illumination were needed to achieve these pitches taking into account the boundary condition of the exposure tool with the wavelength of 248nm and its maximum NA of 0.68. The simulations showed, that normalized image log slope (NILS) is above 2 for a focus range of at least 600nm, if an alternating phase shift mask is used at the very low σ of 0.2 Typical manufacturing conditions with process variations, lens errors and mask deviations were included in the simulations. Based on these results, on the one hand the mask was specified and manufactured; on the other hand the tool was adaptated to the low σ requirement and the specific lens error sensitivities. Shipley's UV212 on BARC AR7 was used at a resist thickness of 250nm. The resist process was optimized by reducing the concentration of the developer. Finally, experimental verification of this entire system with wafer exposures shows that 90nm lines with a pitch of 200nm could be printed with a focus window of more than 600nm.
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Stefan Majoni, Stefan Majoni, Frank A.J.M. Driessen, Frank A.J.M. Driessen, Bryan S. Kasprowicz, Bryan S. Kasprowicz, Paul D. Harris, Paul D. Harris, } "A 90-nm design-rule patterning application using alt-PSM with KrF lithography for volume manufacturing at k1=0.27", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.544254; https://doi.org/10.1117/12.544254
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