28 May 2004 Aberration measurement and matching: a correlation of measurement techniques and dedication scheme implications
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Abstract
The need to improve the Overlay and CD Budget requirements of current device technologies has driven the introduction of tool dedication schemes in semiconductor manufacturing. Dedication schemes have provided an opportunity to minimize systematic field distortion differences from layer to layer. The cost and manufacturing complexity of dedication schemes can however be a burden on the process and tools required. We will present experimental results of an aberration measurement method used on a Front End of Line tool-set to empirically describe the matching of a series of tools used in a dedicated processing scheme. We will also show simulation results of Pattern Placement Error and CD uniformity effects for the highlighted aberrations. We will use these findings to support product results generated while exercising dedication break analyses experiments on this tool set.
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William R. Roberts, Igor Jekauc, "Aberration measurement and matching: a correlation of measurement techniques and dedication scheme implications", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.535288; https://doi.org/10.1117/12.535288
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