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28 May 2004 Contact hole formation by multiple exposure technique in ultralow-k1 lithography
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The double line and space (L&S) formation method with L&S masks and dipole illumination was found to have high capability to fabricate about 0.3-k1 contact hole (C/H) pattern. The procedure was as follows. The first L&S pattern was formed and was hardened to avoid the dissolution and mixing during the second resist coating. The second L&S pattern perpendicular to the first one was formed on the first resist pattern. The common space area of the two patterns became 1:1 C/H pattern. Simulation results showed that the double L&S formation method has much wider lithography latitude than other methods, such as single exposure of a C/H mask with quadrupole illumination, single exposure of a vortex mask with conventional illumination, and double exposure of L&S masks with dipole illumination to a single layer resist. 75-nm (0.30-k1) 1:1 C/H pattern was fabricated. 80-nm (0.32-k1) 1:1 C/H pattern had 280 nm and 600 nm depth of focus (DOF) in each resist layer. Moreover, a new method, in which a C/H mask replaces the L&S masks, is proposed to achieve cost reduction and the same high performance as the L&S masks.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroko Nakamura, Yasunobu Onishi, Kazuya Sato, Satoshi Tanaka, Shoji Mimotogi, Koji Hashimoto, and Soichi Inoue "Contact hole formation by multiple exposure technique in ultralow-k1 lithography", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004);


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