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28 May 2004 Correlating reticle pinhole defects to wafer printability for the 90-nm node lithography using advanced RET
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Abstract
For the 90nm-lithography node, understanding the impact of various reticle pinhole defects on wafer printability is essential to optimize wafer yield and to create the best quality reticle defect specification. In this study, a new programmed pinhole test reticle was designed by UMC, TCE and KLA-Tencor based on UMC's process requirements for its 193nm lithography. The reticle was manufactured and inspected on KLA-Tencor's high-resolution reticle inspection system in die to database mode by TCE. The reticle was then printed on a wafer by UMC to characterize the printability impact of programmed pinhole defects. The programmed pinhole test reticle, "193PTM", consists of two IC background patterns - poly gate and contact with programmed pinholes at various locations. The pinhole size ranges from 20nm to 75nm in 5nm increments on the wafer. By comparing the high-resolution pattern inspection results to the wafer print data, we have established the correlation and the appropriate mask specifications based on wafer application guidelines.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. B. Shieh, William Chou, Chuen-Huei Yang, J. K. Wu, Noah Chen, Shih Ming Yen, Tony Hsu, Steve Tuan, Doris Chang, Maciej W. Rudzinski, Lantian Wang, and Kong Son "Correlating reticle pinhole defects to wafer printability for the 90-nm node lithography using advanced RET", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.544243
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