28 May 2004 Developable bottom antireflective coatings for 248-nm and 193-nm lithography
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Abstract
So far the IC industry is using dyed resist and TARC for the implant layer lithography. However, this approach cannot provide the necessary CD control for the 65nm node and below. One could use organic BARC to improve CD control but the dry etching process can cause substrate damage and also add considerable expense to the process. Cox et al at Brewer Science have reported some wet developable BARCs with TMAH soluble polymers. However the development is isotropic for these materials and it is difficult to control the development process for profile shape and across wafer uniformity. In this paper we describe new developable KrF and ArF photosensitive developable BARCs (DBARCs) that use the concepts of positive chemical amplified resist concept. These DBARCs have significant advantages over the conventional BARCs and also over processes using TARC. These new DBARC provide a large pattern collapse margin and a good process window. We will report in this study on the process evaluation of the combination of Clariant KrF and ArF resists and DBARCs. As the DBARC itself is also photosensitive the matching of the sensitivity with resist is important. The KrF DBARC and resist combination gives 180nm lines and spaces with a good process window. This meets the requirements of 65nm implant processes.
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Tomohide Katayama, Tomohide Katayama, Hisashi Motobayashi, Hisashi Motobayashi, Wen-Bing Kang, Wen-Bing Kang, Medhat A. Toukhy, Medhat A. Toukhy, Joseph E. Oberlander, Joseph E. Oberlander, Shuji S. Ding, Shuji S. Ding, Mark Neisser, Mark Neisser, } "Developable bottom antireflective coatings for 248-nm and 193-nm lithography", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.537539; https://doi.org/10.1117/12.537539
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