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28 May 2004 Experimental verification of a model-based decomposition method for double dipole lithography
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Double Dipole Lithography (DDL) is one of the candidates for extending optical lithography into the k1=0.30 regime. In 2001 the first experimental 2D elbow structures were reported. In 2002 a rule based decomposition and a model assisted decomposition method were presented. In 2003 a new, model based decomposition step has been presented. Now we present the results of applying this model based decomposition by discussing the first experimental results on a 0.75 NA ArF scanner printing 70 nm lines at various pitches (160 nm and larger, i.e. k1=0.31 and up). We provide an assessment of the current state of maturity of the DDL technology for the low-k1 regime (0.3..0.4). This is based upon CD uniformity, 2D pattern fidelity and through pitch process latitude behavior.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mark Eurlings, Stephen D. Hsu, Eric Hendrickx, Willem op 't Root, Thomas L. Laidig, Tsann-Bim Chiou, Alek Chen, Fung Chen, Geert Vandenberghe, and Jo Finders "Experimental verification of a model-based decomposition method for double dipole lithography", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004);

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