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28 May 2004 Full-field imaging with a 157-nm scanner
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Abstract
157 nm has been explored as a lithographic technology for several years on small field imaging tools with encouraging results. Significant progress has occurred in tool platform design, resist performance, and optical material quality. However, a major test of a new lithography comes when full field, scanned images can be produced as this becomes a crucial test of system performance and uniformity. We report on early results from a 22 mm x 26 mm (slot x scan) field Micrascan VII 157 nm lithography scanner obtained using a binary reticle. In addition, a full field alternating phase shift reticle was fabricated on modified fused silica1 and used to extend the imaging capability. Resolution and uniformity data from both reticles will be presented. The lithographic performance will also be compared to simulations using predicted performance from the scanner.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris Robinson, Nakgeuon Seong, Kurt Kimmel, Timothy A. Brunner, Michael Hibbs, Michael J. Lercel, Diane McCafferty, Harry Sewell, Timothy K. O'Neil, Juan Ivaldi, and Keith Andresen "Full-field imaging with a 157-nm scanner", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.537447
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