Translator Disclaimer
28 May 2004 Full-field imaging with a 157-nm scanner
Author Affiliations +
157 nm has been explored as a lithographic technology for several years on small field imaging tools with encouraging results. Significant progress has occurred in tool platform design, resist performance, and optical material quality. However, a major test of a new lithography comes when full field, scanned images can be produced as this becomes a crucial test of system performance and uniformity. We report on early results from a 22 mm x 26 mm (slot x scan) field Micrascan VII 157 nm lithography scanner obtained using a binary reticle. In addition, a full field alternating phase shift reticle was fabricated on modified fused silica1 and used to extend the imaging capability. Resolution and uniformity data from both reticles will be presented. The lithographic performance will also be compared to simulations using predicted performance from the scanner.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chris Robinson, Nakgeuon Seong, Kurt Kimmel, Timothy A. Brunner, Michael Hibbs, Michael J. Lercel, Diane McCafferty, Harry Sewell, Timothy K. O'Neil, Juan Ivaldi, and Keith Andresen "Full-field imaging with a 157-nm scanner", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004);


Patterning 80 nm gates using 248 nm lithography an...
Proceedings of SPIE (September 14 2001)
Characterization of linewidth variation on 248 and 193 nm...
Proceedings of SPIE (September 14 2001)
Aerial image based design of rim phase shift masks with...
Proceedings of SPIE (August 08 1993)
Aging study in advanced photomasks impact of EFM effects...
Proceedings of SPIE (September 24 2010)
Mask error enhancement factor for sub-0.13-um lithography
Proceedings of SPIE (September 14 2001)

Back to Top