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28 May 2004 Hard phase-shifting masks for the 65-nm node: a performance comparison
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Abstract
The lithographic potential of various mask types for the printing of 65nm features has been investigated by simulation and experimentation. As key parameters process window, mask error enhancement factor, balancing performance, and phase and CD error susceptibility have been analyzed. Alternating chromeless phase-shifting masks (PSM) show the smallest mask error enhancement factor (MEEF), but the largest phase and CD error sensitivity. Alternating PSM have a larger MEEF but require less tight mask specifications. Double edge chromeless PSM combine small MEEF value with relaxed phase and CD control specifications when an appropriate illumination is chosen. Good intra-field CD control and sufficient large process window for 65nm pattern can be obtained for this mask type. The impact of aberrations and pupil imperfections on the CD control has been investigated. The mask processes will be discussed and mask performance data introduced.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rainer Pforr, Mario Hennig, Roderick Koehle, Nicolo Morgana, Joerg Thiele, and Jens Weckesser "Hard phase-shifting masks for the 65-nm node: a performance comparison", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.534091
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