28 May 2004 Highly durable 4-kHz ArF excimer laser G42A for sub-90-nm lithography
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Mass production in 193 nm lithography is now starting and its target node is moving from 90 nm to 65 nm. The main performance requirement of ArF excimer laser in this situation is high power with ultra narrow spectrum for higher throughput. The other hand, higher reliability and lower cost of ownership (CoO) are strongly hoped in mass production because CoO of ArF excimer laser is still higher than that of KrF excimer laser. We have already reported the 4 kHz ArF excimer laser for mass production, model G42A, which has an 20 W of average power, spectral bandwidth less than 0.3 pm (FWHM) and a spectral purity less than 0.75 pm (E95). We applied some technologies to G42A for achieving the high reliability and long lifetime. As a result, G42A showed the stable performance during the lifetime of over 10 billion pulses. In this paper, we report the long-term stability of G42A. And also, we introduce the reliability data of G40A series, which is the previous 4 kHz ArF excimer laser model.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Saito, Takashi Saito, Hirotoshi Inoue, Hirotoshi Inoue, Hitoshi Nagano, Hitoshi Nagano, Masaya Yoshino, Masaya Yoshino, Osamu Wakabayashi, Osamu Wakabayashi, Ryoichi Nohdomi, Ryoichi Nohdomi, Toshihiro Nishisaka, Toshihiro Nishisaka, Akira Sumitani, Akira Sumitani, Hitoshi Tomaru, Hitoshi Tomaru, Hakaru Mizoguchi, Hakaru Mizoguchi, } "Highly durable 4-kHz ArF excimer laser G42A for sub-90-nm lithography", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.534475; https://doi.org/10.1117/12.534475


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