28 May 2004 Impact of illumination intensity profile on lithography simulation
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Abstract
Accuracy of lithography simulation largely depends on the properly chosen input parameters. Illumination profile among those parameters in the simulation has been idealized into simple intensity profile, which can be described by several characteristic parameters such as inner and outer partial coherences. However, pupil measurement data shows that real illumination intensity profiles in exposure tools are deviated from the ideal intensity profile. Simulation error due to this deviation degrades the accuracy and even spoils extraction of resist parameters. And the intensity profile can be additionally changed by the condition of exposure tool. Hence the modeling of intensity profile is required to improve the accuracy of simulation and to monitor the illumination status of exposure tool. In this paper, we studied the effect of illumination profile on isolated and dense features. The modeling of illumination profile was proposed and equipped on in-house simulation tool. This modeling makes it possible to enhance the accuracy of lithography simulation and monitor the illumination status of exposure tool.
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Chan Hwang, In-sung Kim, Sang-Gyun Woo, Han-Ku Cho, Woo-Sung Han, "Impact of illumination intensity profile on lithography simulation", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.536356; https://doi.org/10.1117/12.536356
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