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28 May 2004 Impact of resist blur on MEF, OPC, and CD control
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This paper will consider the basic concepts of resist blur in a chemically amplified resist process, and the implications of this blur to lithography. In particular, use of a double Gaussian form for the resist blur will be explored. A simple lithographic model utilizing a double Gaussian resist blur was developed and applied to the rapid calculation of lithographic CDs. A typical gate patterning problem was modeled, both with and without assist features, using several different resist blur functions. The OPC treatment was found to be profoundly affected by the resist blur, especially the long-range component. The MEF of small pitch patterns was a sensitive indicator of the short-range blur. The rapid modeling capability allowed large Monte Carlo simulations to explore CD variation at different pitches, pointing out pitches that were particularly vulnerable to CD variation.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Timothy A. Brunner, Carlos Fonseca, Nakgeuon Seong, and Martin Burkhardt "Impact of resist blur on MEF, OPC, and CD control", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004);

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