28 May 2004 Induced density changes in 193-nm excimer-laser-damaged silica glass: a kinetic model
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Abstract
Silica glass exposed to pulsed UV excimer laser irradiation undergoes optical changes that can include either an optical path increase or a decrease. During a given exposure the sign of the induced optical path change can reverse as a function of pulse count. The reduced optical path and sign reversal are only observed in H2-containing glasses, and at high exposure fluence only optical path increase is observed. In past work we proposed an induced density change model invoking a dynamic equilibrium density to explain the high fluence experiments. Here we present a model that extends the density model to the low fluence regime by allowing the equilibrium density to be a function of the time-dependent break-up of the silica network during exposure. The network break-up is tracked by calculation of the induced SiH concentration in the glass. The agreement of optical path change obtained from experimental data with that deduced from the kinetic approach covers a wide range of exposure fluence and molecular hydrogen concentration. Using the model one can predict the change in optical path that arises from the excimer laser exposure.
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Douglas C. Allan, Douglas C. Allan, Roger J. Araujo, Roger J. Araujo, Charlene M. Smith, Charlene M. Smith, Nicholas F. Borrelli, Nicholas F. Borrelli, } "Induced density changes in 193-nm excimer-laser-damaged silica glass: a kinetic model", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.533259; https://doi.org/10.1117/12.533259
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