28 May 2004 Optical lithography with 157-nm technology
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This paper presents the progress of the 157 nm lithography program at ASML and Carl Zeiss SMT in 2003. The major technical problems are solved and the first full field 157 nm scanner was shipped to the industry for starting the process development. The progress in CaF2 material as well as production of CaF2 lens elements allow system to be produced for the 55 nm node. Contamination is shown to be at very low levels and a solution to reduce the influence of hard pellicles below 1 nm distortion is found. The first imaging results show a high depth of focus for 75 nm dense lines.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Theo M. Modderman, Theo M. Modderman, Hans Jasper, Hans Jasper, Herman Boom, Herman Boom, Tammo Uitterdijk, Tammo Uitterdijk, Stephane Dana, Stephane Dana, Harry Sewell, Harry Sewell, Timothy K. O'Neil, Timothy K. O'Neil, Jan Mulkens, Jan Mulkens, Martin Brunotte, Martin Brunotte, Birgit Mecking, Birgit Mecking, Toralf Gruner, Toralf Gruner, "Optical lithography with 157-nm technology", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.535101; https://doi.org/10.1117/12.535101


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