RET for optical maskless lithography

Tor Sandstrom; Hans Martinsson

doi:10.1117/12.535414

28 May 2004 RET for optical maskless lithography

Tor Sandstrom, Hans Martinsson

Proceedings Volume 5377, Optical Microlithography XVII; (2004) https://doi.org/10.1117/12.535414
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Due to the ever-increasing mask cost, Optical Maskless Lithography provides an attractive alternative to mask-based lithography, especially for low-volume runs. In order to offer a seamless mix-and-match solution with mask-based scanners, or a complete transfer from mask-based to maskless lithography, the imaging performance of a maskless tool must at least match the performance of a regular scanner. This paper reports results from simulations showing very good agreement with a mask-based scanner at the 65 nm design node, including semi-isolated lines of 50 nm (AttPSM), 45 nm (CPL), and 35 nm (phase edge). Due to a new enhanced rasterization, the results show minor or no influence at all from the pixel grid. The results also indicate that a maskless tool can use the same OPC model as a mask-based scanner, including phase-shifting.

Citation Download Citation

Tor Sandstrom and Hans Martinsson "RET for optical maskless lithography", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.535414

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