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28 May 2004 RET for optical maskless lithography
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Abstract
Due to the ever-increasing mask cost, Optical Maskless Lithography provides an attractive alternative to mask-based lithography, especially for low-volume runs. In order to offer a seamless mix-and-match solution with mask-based scanners, or a complete transfer from mask-based to maskless lithography, the imaging performance of a maskless tool must at least match the performance of a regular scanner. This paper reports results from simulations showing very good agreement with a mask-based scanner at the 65 nm design node, including semi-isolated lines of 50 nm (AttPSM), 45 nm (CPL), and 35 nm (phase edge). Due to a new enhanced rasterization, the results show minor or no influence at all from the pixel grid. The results also indicate that a maskless tool can use the same OPC model as a mask-based scanner, including phase-shifting.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tor Sandstrom and Hans Martinsson "RET for optical maskless lithography", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.535414
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