28 May 2004 Sub-0.25-pm 50-W amplified excimer laser system for 193-nm lithography
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We report performance parameters of a robust, 50 W, high repetition rate amplified ArF excimer laser system with FWHM bandwidth of less than 0.25 pm, 95% energy content bandwidth of less than 0.55 pm, and ultra-low ASE level. Proprietary design solutions enable stable operation with a substantial reliability margin at this high power level. We report on characterization of all the key parameters of importance for the next generation microlithography tools, such as spectrum and dose control stability, in various operating modes.
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Sergei V. Govorkov, Sergei V. Govorkov, Alexander O. Wiessner, Alexander O. Wiessner, Gongxue Hua, Gongxue Hua, Timur V. Misuryaev, Timur V. Misuryaev, Andrey N. Knysh, Andrey N. Knysh, Stefan Spratte, Stefan Spratte, Peter Lokai, Peter Lokai, Tamas Nagy, Tamas Nagy, Igor Bragin, Igor Bragin, Andreas Targsdorf, Andreas Targsdorf, Thomas Schroeder, Thomas Schroeder, Hans-Stephan Albrecht, Hans-Stephan Albrecht, Rainer Desor, Rainer Desor, Thomas Schmidt, Thomas Schmidt, Rainer Paetzel, Rainer Paetzel, "Sub-0.25-pm 50-W amplified excimer laser system for 193-nm lithography", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.536374; https://doi.org/10.1117/12.536374

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