28 May 2004 Two threshold resist models for optical proximity correction
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Abstract
There have been several kinds of resist model proposed for optical proximity correction. The simplest one is the constant threshold resist model. By this method, only area with intensity above a certain threshold value would be developed. Unfortunately, the constant threshold resist model is too simplified to accurately describe the entire resist processes. To solve this problem, variable threshold resist models were proposed thereafter. The printed resist edge is characterized in terms of the aerial image properties, such as intensity, intensity slope and so forth. More parameters and freedoms are required to describe the complicated chemical reactions of the resist during exposure and development processes. However, the computation time for OPC would increase significantly due to the supplementary calculation of the extra aerial image properties. In this paper, the dual model of constant threshold was proposed to enhance the accuracy of constant threshold resist models. Two constant threshold resist models were determined by model fitting process based on different types of pattern structures. During the correction, one-dimensional and two-dimensional edges are identified first and different constant-threshold models were applied for simulation. Good corrections on both of the one-dimensional line/space widths and two-dimensional line-ends could be achieved. The simulation results were also compared with experimental data.
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Wen-Chun Huang, Chia-Hui Lin, Chin-Chen Kuo, C. C. Huang, J. F. Lin, Jeng-Horng Chen, Ru-Gun Liu, Yao Ching Ku, Burn-Jeng Lin, "Two threshold resist models for optical proximity correction", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); doi: 10.1117/12.544252; https://doi.org/10.1117/12.544252
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