Paper
29 April 2004 Improving manufacturing variability control in advanced CMOS technology by using TCAD methodology
Jihong Chen, Jeff Wu, Kaiping Liu, Hong Yang, David Scott
Author Affiliations +
Abstract
Rapid development of a well controlled manufacturing process is a key component of marketplace success. Accomplishing this requires a thorough understanding of the effects of process variations on parametric yield. Use of Technology Computer Assisted Design (TCAD) simulations and statistical analysis can decrease the time needed to assess the manufacturability of various transistor design options, and identify the key process parameters that cause the largest variations. This paper covers a new methodology that combines Design of Experiments (DOE) with process and device simulations to generate transistor parametric statistical models. Monte-Carlo simulations are performed to generate transistor parametric sensitivities and statistical distributions. Examples of applying this methodology to 130nm technology will be given.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jihong Chen, Jeff Wu, Kaiping Liu, Hong Yang, and David Scott "Improving manufacturing variability control in advanced CMOS technology by using TCAD methodology", Proc. SPIE 5378, Data Analysis and Modeling for Process Control, (29 April 2004); https://doi.org/10.1117/12.537172
Lens.org Logo
CITATIONS
Cited by 2 patents.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Monte Carlo methods

Transistors

Manufacturing

TCAD

Statistical analysis

Data modeling

Single sideband modulation

Back to Top