29 April 2004 Improving manufacturing variability control in advanced CMOS technology by using TCAD methodology
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Abstract
Rapid development of a well controlled manufacturing process is a key component of marketplace success. Accomplishing this requires a thorough understanding of the effects of process variations on parametric yield. Use of Technology Computer Assisted Design (TCAD) simulations and statistical analysis can decrease the time needed to assess the manufacturability of various transistor design options, and identify the key process parameters that cause the largest variations. This paper covers a new methodology that combines Design of Experiments (DOE) with process and device simulations to generate transistor parametric statistical models. Monte-Carlo simulations are performed to generate transistor parametric sensitivities and statistical distributions. Examples of applying this methodology to 130nm technology will be given.
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Jihong Chen, Jeff Wu, Kaiping Liu, Hong Yang, David Scott, "Improving manufacturing variability control in advanced CMOS technology by using TCAD methodology", Proc. SPIE 5378, Data Analysis and Modeling for Process Control, (29 April 2004); doi: 10.1117/12.537172; https://doi.org/10.1117/12.537172
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