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29 April 2004 In-tool process control for advanced patterning based on integrated metrology
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Abstract
Control on the order of a nanometer is crucial for present days advanced logic, SRAM, and DRAM integrated circuits (IC). This level of control is necessary to ensure proper functioning of these circuits. In logic and SRAM applications the most important control parameter is the critical dimension of the gate conductor and for DRAM deep trench it is the etch depth. Advanced Process Control (APC) using feedforward and feedback closed loop techniques have been implemented in fabs for over two decades. Up until recently most fabs have used standalone metrology tools exclusively to collect critical wafer parameters. In this paper, a fully integrated TransformaTM Closed Loop (CL) etch system is used to facilitate nanometer gate etch control by enabling, for the first time, real-time feedforward and feedback measurement on a gate etch process.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
David S. L. Mui, Hiroki Sasano, Wei Liu, John Yamartino, and Andrew Skumanich "In-tool process control for advanced patterning based on integrated metrology", Proc. SPIE 5378, Data Analysis and Modeling for Process Control, (29 April 2004); https://doi.org/10.1117/12.537444
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