3 May 2004 High-performance circuit design for the RET-enabled 65-nm technology node
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Abstract
The implementation of alternating phase shifted mask lithography for the poly-conductor level of IBM's leading edge 65nm microprocessor is described. Very broad and 'resolution-enhancement-technology generic' design rules, referred to as radical design restrictions, are demonstrated to be key enablers of alternating phase shifted mask design. The benefit of these radical design restrictions over conventional design rules and other alternating phase shifted mask design approaches is detailed for key aspects of the design flow.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lars W. Liebmann, Lars W. Liebmann, Arnold E. Barish, Arnold E. Barish, Zachary Baum, Zachary Baum, Henry A. Bonges, Henry A. Bonges, Scott J. Bukofsky, Scott J. Bukofsky, Carlos A. Fonseca, Carlos A. Fonseca, Scott D. Halle, Scott D. Halle, Gregory A. Northrop, Gregory A. Northrop, Steven L. Runyon, Steven L. Runyon, Leon Sigal, Leon Sigal, } "High-performance circuit design for the RET-enabled 65-nm technology node", Proc. SPIE 5379, Design and Process Integration for Microelectronic Manufacturing II, (3 May 2004); doi: 10.1117/12.538242; https://doi.org/10.1117/12.538242
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