3 May 2004 Minimizing mask complexity for advanced optical lithography
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The extension of optical lithography to ever deeper sub-wavelength feature sizes has led to an alarming increase in photo-mask complexity and associated cost. Changes in design philosophy can play a key role in mitigating this trend. We propose the introduction of a new optimization cycle early in the physical design process based on minimizing pattern complexity. We study the use of a pattern complexity metric based on Fourier coding to accomplish such an optimization. The ultimate goal is simplification of resolution enhancement technology (RET) methods required for a given design and the generation of a correspondingly simpler and more cost effective mask set.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael Fritze, Michael Fritze, Brian Tyrrell, Brian Tyrrell, "Minimizing mask complexity for advanced optical lithography", Proc. SPIE 5379, Design and Process Integration for Microelectronic Manufacturing II, (3 May 2004); doi: 10.1117/12.536369; https://doi.org/10.1117/12.536369

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