3 May 2004 Minimizing mask complexity for advanced optical lithography
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Abstract
The extension of optical lithography to ever deeper sub-wavelength feature sizes has led to an alarming increase in photo-mask complexity and associated cost. Changes in design philosophy can play a key role in mitigating this trend. We propose the introduction of a new optimization cycle early in the physical design process based on minimizing pattern complexity. We study the use of a pattern complexity metric based on Fourier coding to accomplish such an optimization. The ultimate goal is simplification of resolution enhancement technology (RET) methods required for a given design and the generation of a correspondingly simpler and more cost effective mask set.
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Michael Fritze, Michael Fritze, Brian Tyrrell, Brian Tyrrell, "Minimizing mask complexity for advanced optical lithography", Proc. SPIE 5379, Design and Process Integration for Microelectronic Manufacturing II, (3 May 2004); doi: 10.1117/12.536369; https://doi.org/10.1117/12.536369
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