3 May 2004 Taking the X Architecture to the 65-nm technology node
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Abstract
The X Architecture is a new way of orienting the interconnect on an integrated circuit using diagonal pathways, as well as the traditional right-angle, or Manhattan, configuration. By enabling designs with significantly less wire and fewer vias, the X Architecture can provide substantial improvements in chip performance, power consumption and cost. Members of the X Initiative semiconductor supply chain consortium have demonstrated the production worthiness of the X Architecture at the 130-nm and 90-nm process technology nodes. This paper presents an assessment of the manufacturing readiness of the X Architecture for the 65-nm technology node. The extent to which current production capabilities in mask writing, lithography, wafer processing, inspection and metrology can be used is discussed using the results from a 65-nm test chip. The project was a collaborative effort amongst a number of companies in the IC fabrication supply chain. Applied Materials fabricated the 65-nm X Architecture test chip at its Maydan Technology Center and leveraged the technology of other X Initiative members. Cadence Design Systems provided the test structure design and chip validation tools, Dai Nippon Printing produced the masks and Canon’s imaging system was employed for the photolithography.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Robin C. Sarma, Robin C. Sarma, Michael C. Smayling, Michael C. Smayling, Narain Arora, Narain Arora, Toshiyuki Nagata, Toshiyuki Nagata, Michael P. Duane, Michael P. Duane, Santosh Shah, Santosh Shah, Harris J. Keston, Harris J. Keston, Shiany Oemardani, Shiany Oemardani, } "Taking the X Architecture to the 65-nm technology node", Proc. SPIE 5379, Design and Process Integration for Microelectronic Manufacturing II, (3 May 2004); doi: 10.1117/12.536130; https://doi.org/10.1117/12.536130
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