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9 September 2004 Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation
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Proceedings Volume 5380, Optical Data Storage 2004; (2004) https://doi.org/10.1117/12.557067
Event: Optical Data Storage Topical Meeting, 2004, Monterey, California, United States
Abstract
Reflectivity variations during phase-transition between amorphous and crystalline states of a Bi-doped GeTe-Sb2Te3 pseudo-binary compound film is investigated with sub-nanosecond laser pulses using a pump-and-probe technique. We also use a two-laser static tester to estimate the onset time of crystallization under a 2.0-μs-pulse excitation. Experimental results indicate that the formation of a melt-quenched amorphous mark is completed in about one nanosecond, but crystalline mark formation on an as-deposited amorphous region requires several hundred nanoseconds. Simple arguments based on heat diffusion are used to explain the time scale of amorphization and the threshold for creation of a burned-out hole on the phase-change film.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuo Watabe, Pavel Polynkin, and Masud Mansuripur "Behavior of GeSbTeBi phase-change optical recording media under sub-nanosecond pulsed laser irradiation", Proc. SPIE 5380, Optical Data Storage 2004, (9 September 2004); https://doi.org/10.1117/12.557067
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