Effect of stoichiometry on sensing behavior of iron-gallium

Jayasimha Atulasimha; Alison B. Flatau; Inderjit Chopra; Rick A. Kellogg

doi:10.1117/12.539397

21 July 2004 Effect of stoichiometry on sensing behavior of iron-gallium

Jayasimha Atulasimha, Alison B. Flatau, Inderjit Chopra, Rick A. Kellogg

Proceedings Volume 5387, Smart Structures and Materials 2004: Active Materials: Behavior and Mechanics; (2004) https://doi.org/10.1117/12.539397
Event: Smart Structures and Materials, 2004, San Diego, CA, United States

Abstract

Iron-Gallium alloys demonstrate moderate magnetostriction (~350 ppm) and saturation material induction (~1 T) under low magnetic fields (~400 Oe) as well as high tensile strength (~500 MPa) and limited dependence of magnetomechanical properties on temperatures between -20°C and 80°C, making them promising materials for sensing and actuation applications. However, the mechanical and magnetic properties of these materials vary significantly with the percentage of gallium, which motivates this study on the effect of stoichiometry on the behavior of Fe-Ga alloys. Major loop compressive tests (loading to 110 MPa and unloading, at magnetic fields ranging from 0 to 891 Oe) were performed on single crystal 19% Ga and 24% Ga samples with longitudinal axis in the [100] direction. The effect of % Ga on Young's modulus, saturation magnetization (M_sat), ΔE-effect and d*₃₃ are discussed and explained. Furthermore, it was found that the magnetic field (H) through the sample changed with applied stress. A simple magnetic circuit analysis is developed in the latter part of the paper to model this effect. The ramification of both stoichiometry effects and variation in field on the design of Fe-Ga sensors is discussed.

Citation Download Citation

Jayasimha Atulasimha, Alison B. Flatau, Inderjit Chopra, and Rick A. Kellogg "Effect of stoichiometry on sensing behavior of iron-gallium", Proc. SPIE 5387, Smart Structures and Materials 2004: Active Materials: Behavior and Mechanics, (21 July 2004); https://doi.org/10.1117/12.539397

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