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18 April 1985 High Contrast Positive Resist II
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Abstract
The functional performance of ULTRAMAC PR914 positive resist on a 10:1 wafer stepper using monochromatic light at 436 nanometers was described in detail at the last SPIE Conference (March 1984). Submicron resolution capabilities in the order of 0.6 micron with edge wall profiles greater than 85° were shown, using the metal-ion-free developer, ULTRAMAC' MF62. This follow-up paper details the functional performance of ULTRAMAC' PR914 positive resist with a new metal-ion-free developer, ULTRAMAC" MF62A. When used at 1:1 dilution, ULTRAMAC' MF62A reduces the exposure energy necessary to obtain high contrast PR914 images by approximately 50% as compared to a 1:1 dilution of ULTRAMAC' MF62, making it a "fast" photoresist system by accepted industry standards. Data is shown with contact, projection and step-and-repeat alignment equipment. Also, a mechanism is proposed to explain the significant reduction in standing waves when ULTRAMAC' PR914 resist is developed with MF62 or MF62A. New data is shown on a modified version of PR914 resist, designated as ULTRAMAC" PR914 AR, for use on highly reflective surfaces, particularly over nonplanar (stepped) features. Deep UV stabilization of both ULTRAMAC' PR914 and PR914 AR, offering excellent thermal stability of critical dimensions, is also shown. Selectivity data of PR914 resist in plasma/RIE etch conditions is presented in comparison with other resists. The effect of high current ion implant (phosphorus and arsenic) on PR914 resist is also reported.
© (1985) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John Grunwald, Edwin J. Turner, David A. Sawoska, and Allen C. Spencer "High Contrast Positive Resist II", Proc. SPIE 0539, Advances in Resist Technology and Processing II, (18 April 1985); https://doi.org/10.1117/12.947849
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