In the paper new theoretical aspects of temporal focusing of photoelectron bunch in time-dependent fields are elucidated. The results of computer modeling on electron-optical system with combined time-dependent eletric and static magnetic fields which ensure both spatial focusing of the bunch and its temporal compressing up to the sub-femtosecond level are presented.

The paper is devoted to the problem of temporal resolution in electron-optical streak tubes intended for ultrafast processes investigation. The temporal threshold of about 150-200 femtoseconds can be hardly overcome without a principally new approach to the design of electron-optical scheme of such tubes. One of the possibilities, namely the use of a photocathode having rather fine grid structure, is numerically analyzed on the basis of 3D field calculations.

Algorithms of the approximated solving of the antiparaxial equations for a finding of a current density on the cathode are offered. Algorithms for the electric potential calculation, coordinates and velocities of the charged particles, and also the space charge in the nearcathode subdomain are stated.

Numerical algorithms of the intensive charged particle beams calculation with the increased accuracy, based on the nearcathode singularity isolation are suggested and realized by decomposition of the computational domain to the nearcathode and the basic subdomains. Calculations in nearcathode subdomain are carried out on a basis of the antiparaxial V.A. Syrovoy's theory, which provides adequate behavior of the solution, and in the basic subdomain the numerical algorithms are used. The examples of numerical test problems calculations are given.

A method of parameterization of electron trajectory equations, which enables to obtain an exact solution to the equation as a sum of solutions to paraxial equation and residue equations, is presented. The residue equations are derived without usage of a common method of expansion in terms of powers of small values. Paraxial equation and residue equations are reduced to the form that does not contain peculiarities typical of mirror and emission systems. The method developed in this paper can be successfully applied to precise, unlimited by a given order of smallness of magnitude, calculation of basic types of aberrations - spherical and axial chromatic aberrations.

In the present paper focusing and time-of-flight characteristics of different 3-D einzel and immersion electrostatic lenses have been studied. These lenses are formed by plane-parallel electrodes with rectangular apertures oriented in the same direction. All the calculations were made using the licensed SIMION 3D (version 7.0) software.

This paper is the further development of work of authors [V.A. Zhukov et. al., Proceedings of SPIE, 5128, (2003)] devoted to theoretical research of the limiting resolution or Critical Development (CD) in ion lithography at use as objectives the combined axial symmetrical immersion lenses. In the given paper the refinement of the basic critical ion-optical parameters of objective combined immersion lenses is carried out. These parameters are the coefficient of a chromatic aberration of first order Cc and the maximal density of a current in the superconducting coil of excitation of combined lens I/S depending on parameter of retardation (immersion) τ=W_t/W_o. Where W_t is energy of ions on a target, W is the energy of ions before a lens, I is a current, and S is area of cross section of the coil. It is shown, that in combined axial symmetrical lenses it is possible to compensate in principle as much as full a chromatic abberation of the first order C_c and a spherical abberation of the third order Cs, since at parametere of retardation τ → 0 also Cc, Cs →0. However, full compensation can take place only at τ=0, i.e. at a full stopping of particles. With the help of a method of Monte Carlo the distributions of implanted Ga atoms on depth and on radial coordinate of a crystal target from silicon are calculated at falling for target surface of indefinitely thin beam of Ga⁺ ions by energy W_t in 1 keV. From these calculations it follows, that using ion implantation from the focused ion beams, it is possible to receive 2 x 10¹² pixels with the size 3.6 x 3.6 nm² everyone, in the frame in the size 3 x 3 mm² on an ion-lithographic target.

It is described the simple practical model of express-estimates of the ion-electron emission (IEE) induced by the fast ion fluxes in the emitter of radioisotope source of current. Under calculations performed it is taken into account the analytical approximations for medium stopping power and electrons inelastic mean free path, the source of suprathermal electrons (SE) generation and the probabilities of SE arriving at the film surface and their passage through surface potential barrier. The model developed may be used for computer simulations of processes in solid-state plasma of emitter films in the radioisotope battery.

The static mass-analyzer with in-homogeneous field and the cylindrical poles suggested by authors earlier has been investigated theoretically when the angle pole sizes were varied in big diapasons. The analytical expression of the magnetic scalar potential distribution has been obtained. The main parameters in the dispersion plane have been found for first order angular focusing when the beam trajectories have three turns. The operating conditions with the space focusing have been found too. The optimal angle pole sizes have been given from point of view of the maximum specific mass dispersion. The comparison with the mass-analyzers with the homogeneous field has been made.

Results are presented for computational modeling an electron-optical system of the photomultiplier (PM) having time resolution of 0.5 ns at linear anode current of 0.1 A. Calculations are given for a cathode chamber, intermediate stages and anode unit of the photomultiplier. Calculations were performed with the help of a TAU application package. The developed cathode chamber assures a good focusing of photoelectrons on the first emitter. The configuration of the electron-optical system of the intermediate multiplying stage has a low spread of electron transit times and good focusing properties. The PM anode unit construction assures minimum waveform distortion of output pulses directed into the recording devices and a maximum linearity limit of the pulse light characteristic. Influence of a spatial charge in the anode unit on linear output current restriction has been discussed.

The physical conception is represented, serving as the basis of the developed model for control of dynamics of thermal and physical phenomena takingplace during effecting vacuum aspherization. This model has been experimentally tested, and in practice it provides forming of solid, free from inner stresses, aspherizing layers possessing the equal-weight structural state. The layers are optically homogenious, and they have the coefficient of refraction stable in time.

Dependence of output characeristics of electron beam from geometry of the emission channel, parameters of the electrode structure of plasma electron sources and concentration of emitting plasma has been calculated by computer simulation of electron-optical systems. It has been shown that dependence of electron beam characteristics on these factors is explained by the depth of penetration of plasma in emission channel and emitting surface form.

Absence of the ion beam monitoring facilities restricts using ion beams for treatment of materials. One of the important ion beam parameters to be measured is the ion energy. In the paper considered are the principles of ion energy distribution monitoring. The described construction allows to choose properly the working mode of ion sources for material treatment.

The spread function of electrostatic analyzers plays a key role in reconstructing the electron spectrum. The paper takes the toroidal energy analyzer as an example to simulate the work of its electron optical system and calculate the spread function of the limit resolution of deflecting electrostatic energy analyzers. The relationship between the spread function of the electrostatic analyzer and the source size and position, the width of the entrance and exit slits, the aberration coefficients of its electron optical system, and positioning errors is determined. As the dispersion depends on the relative difference between particle energy and energy settings, the fundamental spectrometric equation for the electrostatic energy analyzer is shown to look like heterogeneous convolution. For this reason the resolution of the analyzer falls with the growing operating voltage and can only be analyzed by using the local modulation transfer function, which is Fourier-series expansion of the spread function at a specific operating voltage. The energy spectrum free from phase errors is shown to determine the limit resolution. The resolution as function of the exit slit width, control voltage and contrast is defined.

Development of electron beam valves (EBV) - the powerful electronic tubes based on a principle of decelerating of electron beams on the anode is carried out for a number of years in VEI. The tendency of improvement of the existing EBV and new development is shown.

Problems of designing of electron optical system (EOS) for electron beam valves (EBV) are considered from the point of view of increase of specific volumetric parameters of devices. The new criterion of quality of electron-optical system of EBV is offered. The approach to increase of specific EBV switching capacity is considered. Comparison of a method by increase of number of cathode units and by increases current emission from the cathode is carried out by means of estimation of EOS index of efficiency. Examples of developed EOS are given, their advantages and disadvantages are considered.

The active experiment "Electron" is intended for the electron beam injection from a meteorological rocket in the ionosphere plasma. The beam is injected in the ionosphere plasma at a current of 0.5A and an energy of 6.5-8 keV. The energy spectrums are given for the plasma electrons and ions. The radio-wave spectrum is measured in a RF frequency range of 100-500 MHz. The radio wave traversing through the electron beam injection region is discussed. The laboratory experiments are performed with the electron beam injection in a rare gas to model the active outer-space experiments.

Experimental and theoretical problems of bipolar ion beam formation are discussed. Various schemes of construction for the guns with bipolar flows are analyzed as well as the results of experimental investigations for realized systems. Bipolar electron-ion-optical systems for perspective beam-plasma microwaves are offered. The possible contribution of the theory to the creation of adequate trajectory analysis programs for bipolar beams is discussed. This contribution consists in the formation of the most full set of exact solutions for program testing, in the consideration of singular emitting surfaces vicinities and region near axis of symmetry; in the formulation of zero-approximation accounting for iterative process.

A pulsed proton-ion high-frequency linear accelerator ILA-0 with an energy of accelerated protons in the main channel equal to 2.9 MeV and with possible acceleration of ions with Z/A=0.5 up to an energy of 5.8 MeV is described (Fig. 1).

No abstract available.

No abstract available.

Problems of backscattered and true-secondary spectra as far as transmission spectra simulation using discrete looses approximation are regarded in this article. Developed model allows acquiring the electron energy spectra from samples with complicated 3-d structure. Besides due to higher detailing of the discrete looses method one can evaluate the spatial energy and accumulated charge distributions more accurately. Simulation results are compared with the experimental ones, SEM image simulation examples are given.

It's shown that modified Laguerre's functions can be used for approximation of electron beam energy loss distribution in semiconductors under the consideration of modificating parameter appropriate choice.

The calculation method of distributions of minority charge carriers generated in the two-layer semiconductor by a wide electron beam with energies 5 - 30 keV based on using the model of independent sources is described.

Effect of chemical composition and imidization temperature of thin polyimide coatings on etching rate in oxygen plasma generated by electron cyclotron resonance source at different bias voltage potential (ion energy) and time of the process was studied. A correlation of plasmochemical etching rate and topology pattern profile of the polyimide coatings at different etching conditions was determined.

The relationship between the rate of plasma-chemical etching of coatings and the molecular weight of polyamidoacid, made from pyrromelite dianhydride and dianiline oxide, and the chemical composition of polyimides is studied. It has been shown by IR spectroscopy that plasma-chemical etching does not produced any chemeical transformation in the bulk of totally imidized coatings. The improvement of adhesion characteristics of the PMDA-ODA coating materials is revealed.

The methods of mathematical modeling have been applied to study possibilities of using confluence analysis for interval estimation of diffusion lengths of minority charge carriers in semiconductors. Confluence analysis has been realized for direct-gap semiconductors at different measurands errors of electron beam energies characteristic of real experiment.

On the basis of Monte-Carlo method a new approach to modeling of an electron interaction with a substance is offered. Some phenomena concerned with spatial energy distribution and accumulation of a charge in an irradiated sample are considered. Calculations of distributions of electric potential and resists polarization induced by an injected charge are presented. It is shown that charging is still the essential circumstance, capable to cause significant loss of accuracy in electron-beam lithography.

The new logitudinal mode of spin oscillations is obtained for the metallic phase of high-temperature superconductors (HTSC). This mode could be generated by the parametric acoustic impulse of longitudinal power of exciting.