Extreme aberration properties of the combined immersion lenses and their prospects in ion nanolithography

Valery A. Zhukov; Yaroslav A. Berdnikov; Evgeni E. Zhurkin

doi:10.1117/12.551869

1 March 2004 Extreme aberration properties of the combined immersion lenses and their prospects in ion nanolithography

Valery A. Zhukov, Yaroslav A. Berdnikov, Evgeni E. Zhurkin

Proceedings Volume 5398, Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics; (2004) https://doi.org/10.1117/12.551869
Event: Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, 2003, Moscow, Russian Federation

Abstract

This paper is the further development of work of authors [V.A. Zhukov et. al., Proceedings of SPIE, 5128, (2003)] devoted to theoretical research of the limiting resolution or Critical Development (CD) in ion lithography at use as objectives the combined axial symmetrical immersion lenses. In the given paper the refinement of the basic critical ion-optical parameters of objective combined immersion lenses is carried out. These parameters are the coefficient of a chromatic aberration of first order Cc and the maximal density of a current in the superconducting coil of excitation of combined lens I/S depending on parameter of retardation (immersion) τ=W_t/W_o. Where W_t is energy of ions on a target, W is the energy of ions before a lens, I is a current, and S is area of cross section of the coil. It is shown, that in combined axial symmetrical lenses it is possible to compensate in principle as much as full a chromatic abberation of the first order C_c and a spherical abberation of the third order Cs, since at parametere of retardation τ → 0 also Cc, Cs →0. However, full compensation can take place only at τ=0, i.e. at a full stopping of particles. With the help of a method of Monte Carlo the distributions of implanted Ga atoms on depth and on radial coordinate of a crystal target from silicon are calculated at falling for target surface of indefinitely thin beam of Ga⁺ ions by energy W_t in 1 keV. From these calculations it follows, that using ion implantation from the focused ion beams, it is possible to receive 2 x 10¹² pixels with the size 3.6 x 3.6 nm² everyone, in the frame in the size 3 x 3 mm² on an ion-lithographic target.

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Valery A. Zhukov, Yaroslav A. Berdnikov, and Evgeni E. Zhurkin "Extreme aberration properties of the combined immersion lenses and their prospects in ion nanolithography", Proc. SPIE 5398, Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, (1 March 2004); https://doi.org/10.1117/12.551869

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KEYWORDS

Ions

Lenses

Magnetism

Electrodes

Chromatic aberrations

Gallium

Colorimetry

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