1 March 2004 Model of independent sources used for calculation of distribution of minority charge carriers generated in two-layer semiconductor by electron beam
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Proceedings Volume 5398, Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics; (2004); doi: 10.1117/12.552175
Event: Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, 2003, Moscow, Russian Federation
Abstract
The calculation method of distributions of minority charge carriers generated in the two-layer semiconductor by a wide electron beam with energies 5 - 30 keV based on using the model of independent sources is described.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. A. Stepovich, A. G. Khokhlov, M. G. Snopova, "Model of independent sources used for calculation of distribution of minority charge carriers generated in two-layer semiconductor by electron beam", Proc. SPIE 5398, Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, (1 March 2004); doi: 10.1117/12.552175; https://doi.org/10.1117/12.552175
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KEYWORDS
Semiconductors

Electron beams

Diffusion

Gallium arsenide

Mathematical modeling

Differential equations

Information operations

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