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1 March 2004 Some possibilities of the use of confluence analysis for an interval parameter estimation of semiconductors in a cathodoluminescent microscopy
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Proceedings Volume 5398, Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics; (2004) https://doi.org/10.1117/12.552218
Event: Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, 2003, Moscow, Russian Federation
Abstract
The methods of mathematical modeling have been applied to study possibilities of using confluence analysis for interval estimation of diffusion lengths of minority charge carriers in semiconductors. Confluence analysis has been realized for direct-gap semiconductors at different measurands errors of electron beam energies characteristic of real experiment.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu. E. Gagarin and M. A. Stepovich "Some possibilities of the use of confluence analysis for an interval parameter estimation of semiconductors in a cathodoluminescent microscopy", Proc. SPIE 5398, Sixth Seminar on Problems of Theoretical and Applied Electron and Ion Optics, (1 March 2004); https://doi.org/10.1117/12.552218
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