Application of the phase-field model to the p-n junction: comparison with the conventional sharp-interface model

Dmitri I. Popov

doi:10.1117/12.555371

5 April 2004 Application of the phase-field model to the p-n junction: comparison with the conventional sharp-interface model

Dmitri I. Popov

Author Affiliations +

Proceedings Volume 5400, Seventh International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2004) https://doi.org/10.1117/12.555371
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

A one-dimensional phase-field method was developed that allowed us to observe the evolution of electric potential, charge density, concentration of holes and electrons, as well as distribution of temperature and temperature-related effects across the p-n junction of a model semiconductor diode.

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Dmitri I. Popov "Application of the phase-field model to the p-n junction: comparison with the conventional sharp-interface model", Proc. SPIE 5400, Seventh International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (5 April 2004); https://doi.org/10.1117/12.555371

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