28 May 2004 AlGaAs-GaAs heterostructure δ-doped field-effect transistor (δ-FET)
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.558432
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
Molecular-beam - grown epitaxy heterostructure field-effect transistors employing a delta-doped channel have been fabricated and investigated. The results of studies of DC parameters of δ-FET's of different configuration can be regarded as the best obtained by other authors for single δ-doped structures. These data as well as the results of modeling and simulation allow one to recommend the studied δ-FET's for digital and analog applications.
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Zauri D. Chakhnakia, Levan V. Khvedelidze, Nina P. Khuchua, Revaz G. Melkadze, G. Peradze, Tatiana B. Sakharova, Z. Hatzopoulos, "AlGaAs-GaAs heterostructure δ-doped field-effect transistor (δ-FET)", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558432; https://doi.org/10.1117/12.558432
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