28 May 2004 AlGaAs-GaAs heterostructure δ-doped field-effect transistor (δ-FET)
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Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.558432
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Molecular-beam - grown epitaxy heterostructure field-effect transistors employing a delta-doped channel have been fabricated and investigated. The results of studies of DC parameters of δ-FET's of different configuration can be regarded as the best obtained by other authors for single δ-doped structures. These data as well as the results of modeling and simulation allow one to recommend the studied δ-FET's for digital and analog applications.
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Zauri D. Chakhnakia, Zauri D. Chakhnakia, Levan V. Khvedelidze, Levan V. Khvedelidze, Nina P. Khuchua, Nina P. Khuchua, Revaz G. Melkadze, Revaz G. Melkadze, G. Peradze, G. Peradze, Tatiana B. Sakharova, Tatiana B. Sakharova, Z. Hatzopoulos, Z. Hatzopoulos, } "AlGaAs-GaAs heterostructure δ-doped field-effect transistor (δ-FET)", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558432; https://doi.org/10.1117/12.558432

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