28 May 2004 Elaboration of gallium arsenide technology in Georgia for development of microelectronic devices
Author Affiliations +
Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.558416
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation
Abstract
Possibilities of gallium arsenide technology in Georgia to fabricate microelectronic devices are described. Characteristics of technological processes and parameters of active and passive components for digital and analog IC's are given. A concept of technology implementation with allowance for design, epistructure growth and processing is proposed which is the basis of a foundry service for application-specific microelectronic components.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nina P. Khuchua, Nina P. Khuchua, Zauri D. Chakhnakia, Zauri D. Chakhnakia, Levan V. Khvedelidze, Levan V. Khvedelidze, Revaz G. Melkadze, Revaz G. Melkadze, Albert A. Tutunjan, Albert A. Tutunjan, Givi D. Kalandadzes, Givi D. Kalandadzes, Nina A. Tutunjan, Nina A. Tutunjan, Roland Diehl, Roland Diehl, } "Elaboration of gallium arsenide technology in Georgia for development of microelectronic devices", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); doi: 10.1117/12.558416; https://doi.org/10.1117/12.558416
PROCEEDINGS
10 PAGES


SHARE
Back to Top